semiconductor group 1 10.94 type ordering code pin configuration marking package 1) (tape and reel) 1 2 3 bas 70-04w bas 70-05w bas 70-06w q62702-a1068 Q62702-A1069 q62702-a1070 a1 a1 c1 c2 a2 c2 c1/a2 c1/c2 a1/a2 74s 75s 76s sot-323 maximum ratings parameter symbol values unit reverse voltage v r 70 v forward current i f 70 ma surge forward current, t 10 ms i fsm 100 ma total power dissipation t s 91 c p tot 250 mw operating temperature range t op C 55 + 150 c storage temperature range t stg C 55 + 150 c thermal resistance junction-ambient 1) r th ja 455 k/w junction-soldering point r th js 235 k/w 1) package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm 2 cu. silicon schottky diode bas 70w
semiconductor group 2 bas 70w electrical characteristics at t a = 25 c, unless otherwise specified. parameter symbol value unit min. typ. max. dc characteristics breakdown voltage i (br) =10 m a v (br) 70 C C v forward voltage i f =1ma i f =10ma i f =15ma v f 300 600 750 375 705 880 410 750 1000 mv reverse current v r =50v v r =70v i r C C C C 0.1 10 m a diode capacitance v r =0v, f = 1 mhz c t C 1.5 2 pf charge carrier life time i f =25ma t C C 100 ps differential forward resistance i f =10ma, f =10khz r f C34C w series inductance l s C2Cnh
semiconductor group 3 bas 70w forward current i f = f ( v f ) diode capacitance c t = f ( v r ) reverse current i r = f ( v r ) differential forward resistance r f = f ( i f )
semiconductor group 4 bas 70w permissible pulse load i f = f ( t a ; t s *) * package mounted on epoxy permissible pulse load i fmax / i fdc = f ( t p ) permissible load r thjs = f ( t p )
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